NTE2577
- Mfr.Part #
- NTE2577
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 180V 2A TO220
- Stock
- 848
- In Stock :
- 848
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- Package :
- Bag
- Current - Collector (Ic) (Max) :
- 2 A
- Collector-Emitter Voltage-Max :
- 180 V
- Collector Current-Max (IC) :
- 2 A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 70mA, 700mA
- Product Status :
- Active
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- Isolated
- Number of Terminals :
- 3
- Transistor Element Material :
- SILICON
- Terminal Form :
- THROUGH-HOLE
- Current - Collector Cutoff (Max) :
- 10μA (ICBO)
- Reach Compliance Code :
- Unknown
- DC Current Gain-Min (hFE) :
- 60
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 700mA, 10V
- Supplier Device Package :
- TO-220
- Number of Elements :
- 1
- Terminal Position :
- Single
- Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- -
- Package Shape :
- RECTANGULAR
- Transistor Type :
- PNP
- Power - Max :
- 20 W
- Qualification Status :
- Not Qualified
- Frequency - Transition :
- 60MHz
- Operating Temperature :
- 150°C (TJ)
- Manufacturer :
- NTE Electronics
- Voltage - Collector Emitter Breakdown (Max) :
- 180 V
- Subcategory :
- Other Transistors
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 20 W
- Datasheets
- NTE2577

PNP 150°C (TJ) 10μA (ICBO) 1 Elements SILICON PNP TO-220-3 Through Hole
NTE2577 Overview
In this device, the DC current gain is 60 @ 700mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 70mA, 700mA.Supplier device package TO-220 comes with the product.Voltage of maximal collector-emitter is set to 180 V.The device exhibits a collector-emitter breakdown at 180 V.
NTE2577 Features
the DC current gain for this device is 60 @ 700mA, 10V
the vce saturation(Max) is 1V @ 70mA, 700mA
the supplier device package of TO-220
NTE2577 Applications
There are a lot of NTE Electronics, Inc
NTE2577 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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