NTE2569

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

100MHz

Configuration :

Single

Series :

-

Surface Mount :

No

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Power - Max :

2 W

Vce Saturation (Max) @ Ib, Ic :

400mV @ 250mA, 5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Package :

Bag

Supplier Device Package :

TO-220

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

150°C (TJ)

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

60 V

Number of Terminals :

3

DC Current Gain-Min (hFE) :

70

Voltage - Collector Emitter Breakdown (Max) :

60 V

Package Shape :

RECTANGULAR

HTS Code :

8541.29.00.75

Terminal Form :

THROUGH-HOLE

Power Dissipation-Max (Abs) :

30 W

Case Connection :

Isolated

Polarity/Channel Type :

PNP

Collector Current-Max (IC) :

10 A

Product Status :

Active

Transistor Type :

PNP

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100µA (ICBO)

Pin Count :

3

Subcategory :

Other Transistors

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1A, 2V

Terminal Position :

Single

Manufacturer :

NTE Electronics

Current - Collector (Ic) (Max) :

10 A

Package / Case :

TO-220-3

Number of Elements :

1