NTE256
- Mfr.Part #
- NTE256
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 400V 28A TO218
- Stock
- 125
- In Stock :
- 125
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector-Base Voltage :
- 600(V)
- Package Shape :
- RECTANGULAR
- Collector Emitter Voltage (VCEO) :
- 400 V
- Power Dissipation-Max (Abs) :
- 150 W
- Package Type :
- TO-218
- Mount :
- Through Hole
- Package / Case :
- TO-218-3
- Configuration :
- Single
- Operating Temperature :
- 175°C (TJ)
- HTS Code :
- 8541.29.00.95
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- COLLECTOR
- Operating Temp Range :
- -65C to 175C
- Qualification Status :
- Not Qualified
- Operating Temperature Classification :
- Military
- Current - Collector Cutoff (Max) :
- 1mA
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 5.6A, 28A
- Polarity/Channel Type :
- NPN
- Package :
- Bag
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 400 V
- Surface Mount :
- No
- Power - Max :
- 150 W
- Terminal Position :
- Single
- Rad Hardened :
- No
- Collector Current (DC) :
- 28(A)
- Polarity :
- NPN
- Emitter-Base Voltage :
- 10(V)
- Power Dissipation :
- 150(W)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 28 A
- Manufacturer :
- NTE Electronics
- JEDEC-95 Code :
- TO-218
- Pin Count :
- 3 +Tab
- ECCN Code :
- EAR99
- Subcategory :
- Other Transistors
- Mounting :
- Through Hole
- Supplier Device Package :
- TO-218
- DC Current Gain-Min (hFE) :
- 20
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- Collector Current-Max (IC) :
- 28 A
- Frequency - Transition :
- -
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation Ambient-Max :
- 150 W
- Max Collector Current :
- 28 A
- Number of Terminals :
- 3
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 600 V
- RoHS :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10A, 5V
- Number of Pins :
- 3
- Series :
- -
- Transistor Application :
- SWITCHING
- Collector-Emitter Voltage-Max :
- 400 V
- Emitter Base Voltage (VEBO) :
- 10 V
- Datasheets
- NTE256

NPN - Darlington 175°C (TJ) 1mA 1 Elements SILICON NPN TO-218-3 Through Hole
NTE256 Overview
In this device, the DC current gain is 30 @ 10A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 5.6A, 28A.Keeping the emitter base voltage at 10 V allows for a high level of efficiency.Supplier device package TO-218 comes with the product.Voltage of maximal collector-emitter is set to 400 V.The device exhibits a collector-emitter breakdown at 400 V.Maximum collector currents can be below 28 A volts.
NTE256 Features
the DC current gain for this device is 30 @ 10A, 5V
the vce saturation(Max) is 5V @ 5.6A, 28A
the emitter base voltage is kept at 10 V
the supplier device package of TO-218
NTE256 Applications
There are a lot of NTE Electronics, Inc
NTE256 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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