NTE256

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Mfr.Part #
NTE256
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN DARL 400V 28A TO218
Stock
125
In Stock :
125

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Collector-Base Voltage :
600(V)
Package Shape :
RECTANGULAR
Collector Emitter Voltage (VCEO) :
400 V
Power Dissipation-Max (Abs) :
150 W
Package Type :
TO-218
Mount :
Through Hole
Package / Case :
TO-218-3
Configuration :
Single
Operating Temperature :
175°C (TJ)
HTS Code :
8541.29.00.95
JESD-30 Code :
R-PSFM-T3
Case Connection :
COLLECTOR
Operating Temp Range :
-65C to 175C
Qualification Status :
Not Qualified
Operating Temperature Classification :
Military
Current - Collector Cutoff (Max) :
1mA
Vce Saturation (Max) @ Ib, Ic :
5V @ 5.6A, 28A
Polarity/Channel Type :
NPN
Package :
Bag
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Voltage - Collector Emitter Breakdown (Max) :
400 V
Surface Mount :
No
Power - Max :
150 W
Terminal Position :
Single
Rad Hardened :
No
Collector Current (DC) :
28(A)
Polarity :
NPN
Emitter-Base Voltage :
10(V)
Power Dissipation :
150(W)
Mounting Type :
Through Hole
Number of Elements :
1
Current - Collector (Ic) (Max) :
28 A
Manufacturer :
NTE Electronics
JEDEC-95 Code :
TO-218
Pin Count :
3 +Tab
ECCN Code :
EAR99
Subcategory :
Other Transistors
Mounting :
Through Hole
Supplier Device Package :
TO-218
DC Current Gain-Min (hFE) :
20
Reach Compliance Code :
Unknown
Product Status :
Active
Collector Current-Max (IC) :
28 A
Frequency - Transition :
-
Terminal Form :
THROUGH-HOLE
Power Dissipation Ambient-Max :
150 W
Max Collector Current :
28 A
Number of Terminals :
3
Transistor Type :
NPN - Darlington
Collector Base Voltage (VCBO) :
600 V
RoHS :
Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10A, 5V
Number of Pins :
3
Series :
-
Transistor Application :
SWITCHING
Collector-Emitter Voltage-Max :
400 V
Emitter Base Voltage (VEBO) :
10 V
Datasheets
NTE256
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE256 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-218-3, Operating Temperature:175°C (TJ), Mounting Type:Through Hole, Number of Pins:3, NTE256 pinout, NTE256 datasheet PDF, NTE256 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE256 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE256


NPN - Darlington 175°C (TJ) 1mA 1 Elements SILICON NPN TO-218-3 Through Hole

NTE256 Overview


In this device, the DC current gain is 30 @ 10A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 5.6A, 28A.Keeping the emitter base voltage at 10 V allows for a high level of efficiency.Supplier device package TO-218 comes with the product.Voltage of maximal collector-emitter is set to 400 V.The device exhibits a collector-emitter breakdown at 400 V.Maximum collector currents can be below 28 A volts.

NTE256 Features


the DC current gain for this device is 30 @ 10A, 5V
the vce saturation(Max) is 5V @ 5.6A, 28A
the emitter base voltage is kept at 10 V
the supplier device package of TO-218


NTE256 Applications


There are a lot of NTE Electronics, Inc
NTE256 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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