NTE2550

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Mfr.Part #
NTE2550
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 10A TO220
Stock
304
In Stock :
304

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
10 A
DC Current Gain-Min (hFE) :
150
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
400 V
Reach Compliance Code :
Unknown
Mounting Type :
Through Hole
Series :
-
Mount :
Through Hole
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
12 V
Operating Temperature :
150°C (TJ)
Voltage - Collector Emitter Breakdown (Max) :
400 V
Power Dissipation-Max (Abs) :
50 W
Power - Max :
50 W
JESD-30 Code :
R-PSFM-T3
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 7A, 2V
Product Status :
Active
Collector Current-Max (IC) :
10 A
Package :
Bag
Number of Terminals :
3
Collector-Emitter Voltage-Max :
400 V
Terminal Form :
THROUGH-HOLE
Max Collector Current :
15 A
Transistor Type :
NPN - Darlington
Collector Base Voltage (VCBO) :
500 V
Number of Elements :
1
RoHS :
Compliant
Number of Pins :
3
Supplier Device Package :
TO-220
Surface Mount :
No
Frequency - Transition :
10MHz
Subcategory :
Other Transistors
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 70mA, 7A
Current - Collector Cutoff (Max) :
100μA
Manufacturer :
NTE Electronics
Polarity/Channel Type :
NPN
Terminal Position :
Single
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Datasheets
NTE2550
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2550 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C (TJ), Number of Pins:3, Package / Case:TO-220-3, NTE2550 pinout, NTE2550 datasheet PDF, NTE2550 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2550 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2550


NPN - Darlington 150°C (TJ) 100μA 1 Elements SILICON NPN TO-220-3 Through Hole

NTE2550 Overview


In this device, the DC current gain is 150 @ 7A, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 70mA, 7A.With the emitter base voltage set at 12 V, an efficient operation can be achieved.Product comes in the supplier's device package TO-220.400 V is set as the maximum collector-emitter voltage.There is a 400 V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15 A volts at Single BJT transistors maximum.

NTE2550 Features


the DC current gain for this device is 150 @ 7A, 2V
the vce saturation(Max) is 1.5V @ 70mA, 7A
the emitter base voltage is kept at 12 V
the supplier device package of TO-220


NTE2550 Applications


There are a lot of NTE Electronics, Inc
NTE2550 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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