NTE2550
- Mfr.Part #
- NTE2550
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 400V 10A TO220
- Stock
- 304
- In Stock :
- 304
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 10 A
- DC Current Gain-Min (hFE) :
- 150
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 400 V
- Reach Compliance Code :
- Unknown
- Mounting Type :
- Through Hole
- Series :
- -
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 12 V
- Operating Temperature :
- 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 400 V
- Power Dissipation-Max (Abs) :
- 50 W
- Power - Max :
- 50 W
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Package Shape :
- RECTANGULAR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 7A, 2V
- Product Status :
- Active
- Collector Current-Max (IC) :
- 10 A
- Package :
- Bag
- Number of Terminals :
- 3
- Collector-Emitter Voltage-Max :
- 400 V
- Terminal Form :
- THROUGH-HOLE
- Max Collector Current :
- 15 A
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 500 V
- Number of Elements :
- 1
- RoHS :
- Compliant
- Number of Pins :
- 3
- Supplier Device Package :
- TO-220
- Surface Mount :
- No
- Frequency - Transition :
- 10MHz
- Subcategory :
- Other Transistors
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 70mA, 7A
- Current - Collector Cutoff (Max) :
- 100μA
- Manufacturer :
- NTE Electronics
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Single
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Datasheets
- NTE2550

NPN - Darlington 150°C (TJ) 100μA 1 Elements SILICON NPN TO-220-3 Through Hole
NTE2550 Overview
In this device, the DC current gain is 150 @ 7A, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 70mA, 7A.With the emitter base voltage set at 12 V, an efficient operation can be achieved.Product comes in the supplier's device package TO-220.400 V is set as the maximum collector-emitter voltage.There is a 400 V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15 A volts at Single BJT transistors maximum.
NTE2550 Features
the DC current gain for this device is 150 @ 7A, 2V
the vce saturation(Max) is 1.5V @ 70mA, 7A
the emitter base voltage is kept at 12 V
the supplier device package of TO-220
NTE2550 Applications
There are a lot of NTE Electronics, Inc
NTE2550 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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