NTE2547
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- Mfr.Part #
- NTE2547
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 1,256
- In Stock ：
- 1,256
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 2 W
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN - Darlington
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 8mA, 4A
- Terminal Form :
- THROUGH-HOLE
- Frequency - Transition :
- 20MHz
- Number of Elements :
- 1
- Case Connection :
- Isolated
- HTS Code :
- 8541.29.00.95
- Subcategory :
- Other Transistors
- Number of Terminals :
- 3
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Mounting Type :
- Through Hole
- Collector-Emitter Voltage-Max :
- 100 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1500 @ 4A, 3V
- Product Status :
- Active
- DC Current Gain-Min (hFE) :
- 1500
- Collector Current-Max (IC) :
- 8 A
- Current - Collector (Ic) (Max) :
- 8 A
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package Shape :
- RECTANGULAR
- Configuration :
- Single
- Package / Case :
- TO-220-3
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- TO-220
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Manufacturer :
- NTE Electronics
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Power Dissipation-Max (Abs) :
- 30 W
- Reach Compliance Code :
- Unknown
- Series :
- -
- Polarity/Channel Type :
- NPN
- Package :
- Bag
- Transistor Element Material :
- SILICON
- Datasheets
- NTE2547
NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN TO-220-3 Through Hole
NTE2547 Overview
This device has a DC current gain of 1500 @ 4A, 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 8mA, 4A means Ic has reached its maximum value(saturated).Product package TO-220 comes from the supplier.100 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 100 VV - Maximum voltage.
NTE2547 Features
the DC current gain for this device is 1500 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of TO-220
NTE2547 Applications
There are a lot of NTE Electronics, Inc
NTE2547 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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