NTE2545

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Mfr.Part #
NTE2545
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 5A TO220
Stock
82
In Stock :
82

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN - Darlington
HTS Code :
8541.29.00.75
ECCN Code :
EAR99
Power Dissipation-Max (Abs) :
30 W
Series :
-
Subcategory :
Other Transistors
Current - Collector (Ic) (Max) :
5 A
Voltage - Collector Emitter Breakdown (Max) :
60 V
Transistor Application :
SWITCHING
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Active
Case Connection :
COLLECTOR
Number of Elements :
1
Polarity/Channel Type :
NPN
Collector Current-Max (IC) :
5 A
Package / Case :
TO-220-3
Terminal Position :
Single
Manufacturer :
NTE Electronics
Frequency - Transition :
200MHz
Mounting Type :
Through Hole
DC Current Gain-Min (hFE) :
2000
Transistor Element Material :
SILICON
Surface Mount :
No
Power - Max :
1.75 W
Collector-Emitter Voltage-Max :
60 V
Reach Compliance Code :
Unknown
Supplier Device Package :
TO-220
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 2.5A, 2V
Operating Temperature :
150°C (TJ)
Number of Terminals :
3
Current - Collector Cutoff (Max) :
100µA (ICBO)
Terminal Form :
THROUGH-HOLE
Package :
Bag
Vce Saturation (Max) @ Ib, Ic :
900mV @ 5mA, 2.5A
JESD-30 Code :
R-PSFM-T3
Datasheets
NTE2545
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2545 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C (TJ), NTE2545 pinout, NTE2545 datasheet PDF, NTE2545 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2545 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2545


NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN TO-220-3 Through Hole

NTE2545 Overview


DC current gain in this device equals 2000 @ 2.5A, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 900mV @ 5mA, 2.5A.Product comes in TO-220 supplier package.Maximal collector-emitter voltage can be set at 60 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

NTE2545 Features


the DC current gain for this device is 2000 @ 2.5A, 2V
the vce saturation(Max) is 900mV @ 5mA, 2.5A
the supplier device package of TO-220


NTE2545 Applications


There are a lot of NTE Electronics, Inc
NTE2545 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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