NTE2541

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Terminal Form :

THROUGH-HOLE

Power - Max :

120 W

Package Shape :

RECTANGULAR

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 24mA, 12A

Collector-Emitter Voltage-Max :

120 V

Current - Collector (Ic) (Max) :

25 A

Voltage - Collector Emitter Breakdown (Max) :

120 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 12A, 4V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Series :

-

Reach Compliance Code :

Unknown

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

Subcategory :

Other Transistors

Power Dissipation-Max (Abs) :

120 W

DC Current Gain-Min (hFE) :

2000

Package :

Bag

Package / Case :

TO-3P-3, SC-65-3

ECCN Code :

EAR99

Number of Elements :

1

Terminal Position :

Single

Current - Collector Cutoff (Max) :

10μA (ICBO)

Frequency - Transition :

-

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Supplier Device Package :

TO-3P

Surface Mount :

No

Manufacturer :

NTE Electronics

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Transistor Type :

NPN - Darlington

JESD-30 Code :

R-PSFM-T3

Collector Current-Max (IC) :

25 A

Mounting Type :

Through Hole

Product Status :

Active