NTE253MCP

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Number of Pins :

3

Transistor Type :

NPN - Darlington

Power - Max :

40 W

Frequency - Transition :

-

Additional Feature :

MATCHED COMPLIMENTARY PAIR CONTAINS NTE253 AND NTE254

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

4 A

Current - Collector Cutoff (Max) :

100μA

Number of Terminals :

3

Mount :

Through Hole

Max Collector Current :

4 A

Number of Elements :

2

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-126

Collector Base Voltage (VCBO) :

80 V

Terminal Position :

Single

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package / Case :

TO-225AA, TO-126-3

Configuration :

SEPARATE, 2 ELEMENTS

Product Status :

Active

JEDEC-95 Code :

TO-126

JESD-30 Code :

R-PSFM-T3

Current - Collector (Ic) (Max) :

4 A

Power Dissipation Ambient-Max :

40 W

ECCN Code :

EAR99

Surface Mount :

No

Package :

Bag

RoHS :

Compliant

DC Current Gain-Min (hFE) :

2500

Transistor Application :

AMPLIFIER

Operating Temperature :

-65°C ~ 150°C (TJ)

Manufacturer :

NTE Electronics

Series :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A, 3V

Terminal Form :

THROUGH-HOLE

Subcategory :

BIP General Purpose Small Signal

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

80 V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Emitter Base Voltage (VEBO) :

5 V

Collector Emitter Voltage (VCEO) :

80 V

Polarity/Channel Type :

NPN AND PNP

Power Dissipation-Max (Abs) :

40 W