NTE2539

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

400 V

Supplier Device Package :

TO-3P

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

NPN

Terminal Position :

Single

Number of Elements :

1

Operating Temperature Classification :

Military

Category :

Bipolar Power

Collector-Emitter Voltage-Max :

400 V

HTS Code :

8541.29.00.95

Package / Case :

TO-3P-3, SC-65-3

Collector-Base Voltage :

500(V)

Number of Terminals :

3

Surface Mount :

No

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Series :

-

Collector Current-Max (IC) :

25 A

Rad Hardened :

No

Mounting Type :

Through Hole

Output Power :

Not Required(W)

Mounting :

Through Hole

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

160 W

Current - Collector (Ic) (Max) :

25 A

Package Type :

TO-247

Current - Collector Cutoff (Max) :

10μA (ICBO)

Product Status :

Active

Reach Compliance Code :

Unknown

Emitter-Base Voltage :

7(V)

Collector Current (DC) :

25(A)

Frequency :

20(MHz)

Power - Max :

2.5 W

Transistor Polarity :

NPN

Subcategory :

Other Transistors

Operating Temp Range :

-55C to 150C

Power Dissipation :

2.5(W)

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 3.2A, 5V

Vce Saturation (Max) @ Ib, Ic :

800mV @ 3.2A, 16A

Configuration :

Single

Operating Temperature :

150°C (TJ)

DC Current Gain-Min (hFE) :

10

Pin Count :

3 +Tab

Frequency - Transition :

20MHz

Terminal Form :

THROUGH-HOLE

Transistor Type :

NPN

Manufacturer :

NTE Electronics