NTE253

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency - Transition :

-

Power Dissipation :

40(W)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Package / Case :

TO-225AA, TO-126-3

Supplier Device Package :

TO-126

ECCN Code :

EAR99

Series :

-

Terminal Position :

Single

JEDEC-95 Code :

TO-126

Emitter-Base Voltage :

5(V)

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Polarity/Channel Type :

NPN

Surface Mount :

No

Current - Collector Cutoff (Max) :

100μA

Collector-Emitter Voltage-Max :

80 V

Voltage - Collector Emitter Breakdown (Max) :

80 V

Power Dissipation-Max (Abs) :

40 W

Operating Temperature :

-65°C ~ 150°C (TJ)

Polarity :

NPN

Rad Hardened :

No

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Number of Terminals :

3

Collector-Emitter Voltage :

80(V)

Product Status :

Active

Transistor Type :

NPN - Darlington

Collector-Base Voltage :

80(V)

Package :

Bag

DC Current Gain-Min (hFE) :

100

Power Dissipation Ambient-Max :

40 W

Operating Temp Range :

-65C to 150C

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A, 3V

JESD-30 Code :

R-PSFM-W3

Pin Count :

3

Manufacturer :

NTE Electronics

Configuration :

Single

Reach Compliance Code :

Unknown

Operating Temperature Classification :

Military

Subcategory :

Other Transistors

Mounting :

Through Hole

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

4 A

DC Current Gain :

100

Maximum Collector Cut-off Current :

500

Terminal Form :

Wire

Collector Current (DC) :

4(A)

Package Type :

TO-126

Power - Max :

40 W

Collector Current-Max (IC) :

4 A