NTE248

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Base Voltage :

100(V)

Polarity/Channel Type :

PNP

Subcategory :

Other Transistors

Package Shape :

Round

Base-Emitter Saturation Voltage (Max) :

4(V)

Mounting Type :

Through Hole

Mounting :

Through Hole

Rad Hardened :

No

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

12 A

Emitter-Base Voltage :

5(V)

Number of Terminals :

2

Package :

Bag

Frequency - Transition :

-

JEDEC-95 Code :

TO-3

Power Dissipation Ambient-Max :

150 W

Supplier Device Package :

TO-3

Case Connection :

COLLECTOR

Manufacturer :

NTE Electronics

Configuration :

Single

Operating Temp Range :

-65C to 200C

Transistor Application :

AMPLIFIER

DC Current Gain :

750

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 6A, 3V

Vce Saturation (Max) @ Ib, Ic :

3V @ 120mA, 12A

Surface Mount :

No

Qualification Status :

Not Qualified

Product Status :

Active

Package Type :

TO-3

Pin Count :

2 +Tab

Power - Max :

150 W

Reach Compliance Code :

Unknown

Power Dissipation-Max (Abs) :

150 W

Transistor Type :

PNP - Darlington

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1mA

Operating Temperature Classification :

Military

Power Dissipation :

150(W)

Current - Collector (Ic) (Max) :

12 A

Package / Case :

TO-204AA, TO-3

Series :

-

Collector-Emitter Voltage-Max :

100 V

JESD-30 Code :

O-MBFM-P2

Terminal Position :

BOTTOM

Collector Current (DC) :

12(A)

Operating Temperature :

-65°C ~ 200°C (TJ)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

100

Polarity :

PNP

Number of Elements :

1

Terminal Form :

PIN/PEG

Voltage - Collector Emitter Breakdown (Max) :

100 V