NTE247
- Mfr.Part #
- NTE247
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A TO3
- Stock
- 464
- In Stock :
- 464
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-3
- Reach Compliance Code :
- Unknown
- Package :
- Bag
- Power Dissipation :
- 150(W)
- Qualification Status :
- Not Qualified
- Polarity :
- NPN
- Polarity/Channel Type :
- NPN
- Rad Hardened :
- No
- Current - Collector Cutoff (Max) :
- 1mA
- Subcategory :
- Other Transistors
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Collector Current (DC) :
- 12(A)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature Classification :
- Military
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Number of Terminals :
- 2
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package Type :
- TO-3
- Transistor Application :
- AMPLIFIER
- Emitter-Base Voltage :
- 5(V)
- Package Shape :
- Round
- Product Status :
- Active
- Terminal Form :
- PIN/PEG
- Collector Current-Max (IC) :
- 12 A
- Power - Max :
- 150 W
- Collector-Base Voltage :
- 100(V)
- DC Current Gain-Min (hFE) :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 6A, 3V
- Transistor Type :
- NPN - Darlington
- DC Current Gain :
- 750
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 12 A
- JESD-30 Code :
- O-MBFM-P2
- Mounting :
- Through Hole
- Series :
- -
- Number of Elements :
- 1
- Pin Count :
- 2 +Tab
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 120mA, 12A
- Terminal Position :
- BOTTOM
- Power Dissipation-Max (Abs) :
- 150 W
- ECCN Code :
- EAR99
- Package / Case :
- TO-204AA, TO-3
- JEDEC-95 Code :
- TO-3
- Operating Temp Range :
- -65C to 200C
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Collector-Emitter Voltage-Max :
- 100 V
- Base-Emitter Saturation Voltage (Max) :
- 4(V)
- Manufacturer :
- NTE Electronics
- Power Dissipation Ambient-Max :
- 150 W
- Datasheets
- NTE247

NPN - Darlington -65°C ~ 200°C (TJ) 1mA 1 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE247 Overview
In this device, the DC current gain is 750 @ 6A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 120mA, 12A.Product comes in the supplier's device package TO-3.100 V is set as the maximum collector-emitter voltage.There is a 100 V maximal voltage in the device due to collector-emitter breakdown.
NTE247 Features
the DC current gain for this device is 750 @ 6A, 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the supplier device package of TO-3
NTE247 Applications
There are a lot of NTE Electronics, Inc
NTE247 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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