NTE2429

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 5V

Supplier Device Package :

SOT-89

ECCN Code :

EAR99

Operating Temperature Classification :

Military

Power Dissipation-Max (Abs) :

1 W

Subcategory :

Other Transistors

Current - Collector (Ic) (Max) :

1 A

Power Dissipation :

1(W)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Output Power :

Not Required(W)

Case Connection :

COLLECTOR

JESD-30 Code :

R-PSSO-F3

Operating Temperature :

150°C (TJ)

Mounting :

Surface Mount

Reach Compliance Code :

Unknown

Frequency - Transition :

100MHz

Configuration :

Single

Collector-Base Voltage :

90(V)

Transistor Polarity :

PNP

Frequency :

100(MHz)

Category :

Bipolar Power

Polarity/Channel Type :

PNP

Product Status :

Active

Transistor Type :

PNP

Operating Temp Range :

-65C to 150C

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package Shape :

RECTANGULAR

Manufacturer :

NTE Electronics

Package Type :

SOT-89

Emitter-Base Voltage :

5(V)

Package / Case :

TO-243AA

Collector Current (DC) :

1(A)

Collector Current-Max (IC) :

1 A

Collector-Emitter Voltage-Max :

80 V

DC Current Gain :

30

Series :

-

Number of Terminals :

3

Qualification Status :

Not Qualified

Power - Max :

1 W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

HTS Code :

8541.29.00.75

Surface Mount :

yes

Rad Hardened :

No

Transistor Application :

SWITCHING

Pin Count :

3 +Tab

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain-Min (hFE) :

50

Package :

Bag