NTE2413

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Configuration :

Single

Package :

Bag

Terminal Position :

Dual

Series :

-

Transistor Type :

PNP

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

800mV @ 5mA, 30mA

JESD-30 Code :

R-PDSO-G3

Frequency - Transition :

60MHz

HTS Code :

8541.21.00.95

Package / Case :

TO-236-3, SC-59, SOT-23-3

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Operating Temperature :

150°C (TJ)

Power - Max :

310 mW

Voltage - Collector Emitter Breakdown (Max) :

300 V

Number of Terminals :

3

Supplier Device Package :

SOT-23

Subcategory :

Other Transistors

Current - Collector (Ic) (Max) :

50 mA

Surface Mount :

yes

Package Shape :

RECTANGULAR

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Collector Current-Max (IC) :

0.05 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA, 20V

Transistor Application :

AMPLIFIER

Power Dissipation-Max (Abs) :

0.31 W

Current - Collector Cutoff (Max) :

50nA

Manufacturer :

NTE Electronics

Number of Elements :

1

DC Current Gain-Min (hFE) :

50

Product Status :

Active