NTE2412

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

300 V

Terminal Position :

Dual

Transistor Application :

AMPLIFIER

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA, 10V

ECCN Code :

EAR99

Configuration :

Single

RoHS :

Compliant

Collector Base Voltage (VCBO) :

300 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Min Operating Temperature :

-55 °C

Power Dissipation-Max (Abs) :

0.31 W

Product Status :

Active

Number of Elements :

1

Qualification Status :

Not Qualified

Frequency - Transition :

100MHz

Emitter Base Voltage (VEBO) :

5 V

Number of Terminals :

3

Current - Collector Cutoff (Max) :

500nA (ICBO)

Supplier Device Package :

SOT-23

Operating Temperature :

150°C (TJ)

HTS Code :

8541.21.00.95

Series :

-

Reach Compliance Code :

Unknown

Max Collector Current :

100 mA

Height :

6.35 mm

Number of Pins :

3

Subcategory :

Other Transistors

Manufacturer :

NTE Electronics

Polarity/Channel Type :

NPN

Length :

165.1 mm

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

2V @ 5mA, 50mA

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

300 V

Max Operating Temperature :

150 °C

Transistor Type :

NPN

Transistor Element Material :

SILICON

Power - Max :

200 mW

DC Current Gain-Min (hFE) :

56

Collector Current-Max (IC) :

0.1 A

Package Shape :

RECTANGULAR

Width :

101.6 mm

Collector-Emitter Voltage-Max :

300 V

Weight :

4.535924 g

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes