NTE241
- Mfr.Part #
- NTE241
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220
- Stock
- 131
- In Stock :
- 131
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-220
- Pin Count :
- 3
- Power - Max :
- 60 W
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 4 A
- JEDEC-95 Code :
- TO-220AB
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Reach Compliance Code :
- Unknown
- DC Current Gain-Min (hFE) :
- 7
- Collector Current-Max (IC) :
- 4 A
- Current - Collector Cutoff (Max) :
- 1mA
- Product Status :
- Active
- Terminal Form :
- THROUGH-HOLE
- Number of Terminals :
- 3
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Collector-Emitter Voltage-Max :
- 80 V
- Vce Saturation (Max) @ Ib, Ic :
- 1.4V @ 1A, 4A
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Manufacturer :
- NTE Electronics
- Polarity/Channel Type :
- NPN
- Power Dissipation-Max (Abs) :
- 60 W
- Configuration :
- Single
- Terminal Position :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Number of Elements :
- 1
- Power Dissipation Ambient-Max :
- 60 W
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Frequency - Transition :
- 2.5MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Subcategory :
- Other Transistors
- Series :
- -
- Package :
- Bag
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 1.5A, 2V
- Datasheets
- NTE241

NPN -65°C ~ 150°C (TJ) 1mA 1 Elements SILICON NPN TO-220-3 Through Hole
NTE241 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 1.5A, 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.4V @ 1A, 4A.TO-220 is the supplier device package for this product.In the 80 V setting, the maximum collector-emitter voltage is set.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
NTE241 Features
the DC current gain for this device is 20 @ 1.5A, 2V
the vce saturation(Max) is 1.4V @ 1A, 4A
the supplier device package of TO-220
NTE241 Applications
There are a lot of NTE Electronics, Inc
NTE241 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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