NTE2366

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

Round

Power - Max :

1 W

Package :

Bag

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

600mV @ 2mA, 20mA

Transistor Element Material :

SILICON

Configuration :

Single

Current - Collector (Ic) (Max) :

100 mA

Number of Terminals :

3

Polarity/Channel Type :

PNP

Power Dissipation-Max (Abs) :

1 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V

Transistor Application :

AMPLIFIER

Collector Current-Max (IC) :

0.1 A

Terminal Position :

BOTTOM

DC Current Gain-Min (hFE) :

40

Terminal Form :

Wire

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA (ICBO)

Frequency - Transition :

150MHz

Operating Temperature :

-55°C ~ 150°C (TJ)

Collector-Emitter Voltage-Max :

300 V

Subcategory :

Other Transistors

HTS Code :

8541.29.00.75

Surface Mount :

No

Supplier Device Package :

TO-92L

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

-

Transistor Type :

PNP

Product Status :

Active

Voltage - Collector Emitter Breakdown (Max) :

300 V

Manufacturer :

NTE Electronics

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Package / Case :

TO-226-3, TO-92-3 Long Body

JESD-30 Code :

O-PBCY-W3