NTE2363
- Mfr.Part #
- NTE2363
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TO92L
- Stock
- 160
- In Stock :
- 160
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- Max Collector Current :
- 4 A
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92L
- Power - Max :
- 1 W
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Power Dissipation-Max (Abs) :
- 1 W
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- DC Current Gain-Min (hFE) :
- 40
- Package Shape :
- Round
- Product Status :
- Active
- Frequency - Transition :
- 150MHz
- Polarity/Channel Type :
- NPN
- Number of Terminals :
- 3
- Package :
- Bag
- Surface Mount :
- No
- Manufacturer :
- NTE Electronics
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA, 2V
- RoHS :
- Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Terminal Position :
- BOTTOM
- Subcategory :
- Other Transistors
- JESD-30 Code :
- O-PBCY-T3
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 6 V
- Collector Emitter Voltage (VCEO) :
- 50 V
- Series :
- -
- Mount :
- Through Hole
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60 V
- Min Operating Temperature :
- -55 °C
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Operating Temperature :
- 150°C (TJ)
- Number of Pins :
- 3
- Max Operating Temperature :
- 150 °C
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- HTS Code :
- 8541.29.00.75
- Collector Current-Max (IC) :
- 2 A
- Current - Collector (Ic) (Max) :
- 2 A
- Collector-Emitter Voltage-Max :
- 50 V
- Datasheets
- NTE2363

NPN 150°C (TJ) 100nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole
NTE2363 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA, 2V.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6 V can achieve high levels of efficiency.Supplier package TO-92L contains the product.Voltage maximal between collector and emitter is set to 50 V.The device has a 50 V maximal voltage - Collector Emitter Breakdown.A maximum collector current of 4 A volts can be achieved.
NTE2363 Features
the DC current gain for this device is 140 @ 100mA, 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6 V
the supplier device package of TO-92L
NTE2363 Applications
There are a lot of NTE Electronics, Inc
NTE2363 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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