NTE2362

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 10mA, 5V

Package / Case :

TO-226-3, TO-92-3 Short Body

Power - Max :

300 mW

Terminal Position :

BOTTOM

Voltage - Collector Emitter Breakdown (Max) :

50 V

Transistor Type :

PNP

Current - Collector (Ic) (Max) :

500 mA

Qualification Status :

Not Qualified

Package Shape :

Round

Package :

Bag

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Frequency - Transition :

300MHz

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.3 W

Collector-Emitter Voltage-Max :

50 V

Reach Compliance Code :

Unknown

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

JESD-30 Code :

O-PBCY-T3

Terminal Form :

THROUGH-HOLE

HTS Code :

8541.21.00.75

Manufacturer :

NTE Electronics

Number of Elements :

1

Surface Mount :

No

Subcategory :

Other Transistors

Transistor Application :

SWITCHING

Supplier Device Package :

TO-92S

Collector Current-Max (IC) :

0.5 A

Number of Terminals :

3

Mounting Type :

Through Hole

Polarity/Channel Type :

PNP

Configuration :

Single

DC Current Gain-Min (hFE) :

200

Product Status :

Active

Current - Collector Cutoff (Max) :

100nA (ICBO)

ECCN Code :

EAR99