NTE2352

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5 V

Current - Collector (Ic) (Max) :

4 A

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

DC Current Gain-Min (hFE) :

1000

Transistor Type :

PNP - Darlington

Terminal Position :

Single

Collector Emitter Voltage (VCEO) :

80 V

Number of Elements :

1

Max Collector Current :

4 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A, 2V

Terminal Form :

THROUGH-HOLE

Package / Case :

3-SIP

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 6mA, 3A

Voltage - Collector Emitter Breakdown (Max) :

80 V

Power - Max :

1 W

Subcategory :

Other Transistors

Mount :

Through Hole

JESD-30 Code :

R-PSIP-T3

Number of Terminals :

3

ECCN Code :

EAR99

Product Status :

Active

Frequency - Transition :

-

Surface Mount :

No

HTS Code :

8541.29.00.95

Current - Collector Cutoff (Max) :

20µA (ICBO)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Operating Temperature :

150°C (TJ)

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Number of Pins :

3

Supplier Device Package :

3-SIP

Collector Base Voltage (VCBO) :

100 V

Package :

Bag

Collector-Emitter Voltage-Max :

80 V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

1 W

Collector Current-Max (IC) :

4 A

Series :

-

RoHS :

Compliant

Reach Compliance Code :

Unknown