NTE2349

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

JEDEC-95 Code :

TO-3

Collector-Emitter Voltage-Max :

120 V

JESD-30 Code :

O-MBFM-P2

Operating Temperature Classification :

Military

Voltage - Collector Emitter Breakdown (Max) :

120 V

Current - Collector Cutoff (Max) :

2mA

Collector Current (DC) :

50(A)

Base-Emitter Saturation Voltage (Max) :

3(V)

Collector Current-Max (IC) :

50 A

Number of Elements :

1

Mounting :

Through Hole

Power Dissipation :

300(W)

Transistor Type :

NPN - Darlington

Power Dissipation Ambient-Max :

300 W

Polarity/Channel Type :

NPN

Power - Max :

300 W

Current - Collector (Ic) (Max) :

50 A

Package Shape :

Round

Collector-Base Voltage :

120(V)

Transistor Element Material :

SILICON

Pin Count :

2 +Tab

Package :

Bag

Polarity :

NPN

Terminal Position :

BOTTOM

Case Connection :

COLLECTOR

Supplier Device Package :

TO-3

Emitter-Base Voltage :

5(V)

Rad Hardened :

No

Subcategory :

Other Transistors

DC Current Gain-Min (hFE) :

400

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

3.5V @ 500mA, 50A

Collector-Emitter Voltage :

120(V)

ECCN Code :

EAR99

Operating Temperature :

-55°C ~ 200°C (TJ)

Package / Case :

TO-204AA, TO-3

Number of Terminals :

2

Package Type :

TO-3

Frequency - Transition :

-

Configuration :

Single

Terminal Form :

PIN/PEG

DC Current Gain :

1000

Surface Mount :

No

Operating Temp Range :

-55C to 200C

Reach Compliance Code :

Unknown

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 25A, 5V

Product Status :

Active

Series :

-

Power Dissipation-Max (Abs) :

300 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

NTE Electronics

Mounting Type :

Through Hole