NTE2345

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

RECTANGULAR

Mounting Type :

Through Hole

Rad Hardened :

No

Polarity :

NPN

Power Dissipation :

60(W)

Configuration :

Single

Transistor Element Material :

SILICON

Operating Temperature :

150°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A, 3V

Series :

-

Package / Case :

SOT-82

Voltage - Collector Emitter Breakdown (Max) :

120 V

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Terminal Position :

Single

Surface Mount :

No

Collector Current (DC) :

6(A)

Mounting :

Through Hole

DC Current Gain-Min (hFE) :

750

Qualification Status :

Not Qualified

Collector-Base Voltage :

120(V)

Manufacturer :

NTE Electronics Inc

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max (Abs) :

60 W

Current - Collector (Ic) (Max) :

6 A

Subcategory :

Other Transistors

Reach Compliance Code :

Unknown

Package :

Bag

Maximum Collector Cut-off Current :

200

Transistor Application :

SWITCHING

Collector-Emitter Voltage-Max :

120 V

Emitter-Base Voltage :

5(V)

DC Current Gain :

750

Collector Current-Max (IC) :

6 A

Operating Temp Range :

-65C to 150C

Case Connection :

COLLECTOR

Number of Terminals :

3

Pin Count :

3 +Tab

Package Type :

SOT-82

Number of Elements :

1

Transistor Type :

NPN - Darlington

Power - Max :

60 W

Current - Collector Cutoff (Max) :

500μA

Product Status :

Active

Operating Temperature Classification :

Military

Polarity/Channel Type :

NPN

Frequency - Transition :

-

Supplier Device Package :

SOT-82