NTE2342
- Mfr.Part #
- NTE2342
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 1A TO92
- Stock
- 54
- In Stock :
- 54
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 200MHz
- Terminal Form :
- Wire
- Qualification Status :
- Not Qualified
- RoHS :
- Compliant
- Package :
- Bag
- Collector-Base Voltage :
- 100(V)
- Reach Compliance Code :
- Unknown
- Manufacturer :
- NTE Electronics
- HTS Code :
- 8541.21.00.75
- Mounting :
- Through Hole
- JEDEC-95 Code :
- TO-92
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- DC Current Gain-Min (hFE) :
- 2000
- Transition Frequency :
- 200 MHz
- Transistor Type :
- PNP - Darlington
- Subcategory :
- Other Transistors
- Max Power Dissipation :
- 1 W
- Emitter-Base Voltage :
- 5(V)
- Max Collector Current :
- 1 A
- Pin Count :
- 3
- Collector Current-Max (IC) :
- 1 A
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Number of Terminals :
- 3
- Emitter Base Voltage (VEBO) :
- 5 V
- Power - Max :
- 1 W
- Collector Base Voltage (VCBO) :
- 100 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- -
- Number of Elements :
- 1
- DC Current Gain :
- 1000
- Product Status :
- Active
- Rad Hardened :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA, 10V
- Collector Emitter Breakdown Voltage :
- 80 V
- Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 1 A
- Package Shape :
- Round
- Power Dissipation-Max (Abs) :
- 1 W
- Configuration :
- Single
- Power Dissipation :
- 1(W)
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-30 Code :
- O-PBCY-W3
- Base-Emitter Saturation Voltage (Max) :
- 2.2(V)
- Surface Mount :
- No
- Operating Temp Range :
- -65C to 150C
- Operating Temperature Classification :
- Military
- Package Type :
- TO-92
- Collector Current (DC) :
- 1(A)
- Operating Temperature :
- 150°C (TJ)
- Maximum Collector Cut-off Current :
- 0.1
- Collector-Emitter Voltage-Max :
- 80 V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Voltage (VCEO) :
- 80 V
- Datasheets
- NTE2342

PNP - Darlington 150°C (TJ) 500nA 1 Elements SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Through Hole
NTE2342 Overview
DC current gain in this device equals 2000 @ 500mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1mA, 1A.An emitter's base voltage can be kept at 5 V to gain high efficiency.As a result, the part has a transition frequency of 200 MHz.Product comes in TO-92 supplier package.Maximal collector-emitter voltage can be set at 80 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1 A volts.
NTE2342 Features
the DC current gain for this device is 2000 @ 500mA, 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5 V
a transition frequency of 200 MHz
the supplier device package of TO-92
NTE2342 Applications
There are a lot of NTE Electronics, Inc
NTE2342 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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