NTE2342

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Mfr.Part #
NTE2342
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP DARL 80V 1A TO92
Stock
54
In Stock :
54

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
200MHz
Terminal Form :
Wire
Qualification Status :
Not Qualified
RoHS :
Compliant
Package :
Bag
Collector-Base Voltage :
100(V)
Reach Compliance Code :
Unknown
Manufacturer :
NTE Electronics
HTS Code :
8541.21.00.75
Mounting :
Through Hole
JEDEC-95 Code :
TO-92
Terminal Position :
BOTTOM
Mounting Type :
Through Hole
Supplier Device Package :
TO-92
Voltage - Collector Emitter Breakdown (Max) :
80 V
DC Current Gain-Min (hFE) :
2000
Transition Frequency :
200 MHz
Transistor Type :
PNP - Darlington
Subcategory :
Other Transistors
Max Power Dissipation :
1 W
Emitter-Base Voltage :
5(V)
Max Collector Current :
1 A
Pin Count :
3
Collector Current-Max (IC) :
1 A
Mount :
Through Hole
ECCN Code :
EAR99
Number of Terminals :
3
Emitter Base Voltage (VEBO) :
5 V
Power - Max :
1 W
Collector Base Voltage (VCBO) :
100 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
-
Number of Elements :
1
DC Current Gain :
1000
Product Status :
Active
Rad Hardened :
No
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA, 10V
Collector Emitter Breakdown Voltage :
80 V
Polarity :
PNP
Current - Collector (Ic) (Max) :
1 A
Package Shape :
Round
Power Dissipation-Max (Abs) :
1 W
Configuration :
Single
Power Dissipation :
1(W)
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Transistor Application :
SWITCHING
Number of Pins :
3
JESD-30 Code :
O-PBCY-W3
Base-Emitter Saturation Voltage (Max) :
2.2(V)
Surface Mount :
No
Operating Temp Range :
-65C to 150C
Operating Temperature Classification :
Military
Package Type :
TO-92
Collector Current (DC) :
1(A)
Operating Temperature :
150°C (TJ)
Maximum Collector Cut-off Current :
0.1
Collector-Emitter Voltage-Max :
80 V
Transistor Element Material :
SILICON
Current - Collector Cutoff (Max) :
500nA
Collector Emitter Voltage (VCEO) :
80 V
Datasheets
NTE2342
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2342 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Operating Temperature:150°C (TJ), NTE2342 pinout, NTE2342 datasheet PDF, NTE2342 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2342 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2342


PNP - Darlington 150°C (TJ) 500nA 1 Elements SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Through Hole

NTE2342 Overview


DC current gain in this device equals 2000 @ 500mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1mA, 1A.An emitter's base voltage can be kept at 5 V to gain high efficiency.As a result, the part has a transition frequency of 200 MHz.Product comes in TO-92 supplier package.Maximal collector-emitter voltage can be set at 80 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1 A volts.

NTE2342 Features


the DC current gain for this device is 2000 @ 500mA, 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5 V
a transition frequency of 200 MHz
the supplier device package of TO-92


NTE2342 Applications


There are a lot of NTE Electronics, Inc
NTE2342 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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