NTE2341
- Mfr.Part #
- NTE2341
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A TO92
- Stock
- 116
- In Stock :
- 116
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 200MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100 V
- Base-Emitter Saturation Voltage (Max) :
- 2.2(V)
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5 V
- Operating Temperature Classification :
- Military
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temp Range :
- -65C to 150C
- Surface Mount :
- No
- Terminal Position :
- BOTTOM
- Collector-Emitter Voltage-Max :
- 80 V
- Subcategory :
- Other Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Maximum Collector Cut-off Current :
- 0.1
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- DC Current Gain-Min (hFE) :
- 2000
- HTS Code :
- 8541.21.00.75
- RoHS :
- Compliant
- JESD-30 Code :
- O-PBCY-W3
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 1 W
- Manufacturer :
- NTE Electronics
- Package Shape :
- Round
- Supplier Device Package :
- TO-92
- Mounting :
- Through Hole
- JEDEC-95 Code :
- TO-92
- Max Collector Current :
- 1 A
- Polarity/Channel Type :
- NPN
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA, 10V
- Package Type :
- TO-92
- DC Current Gain :
- 1000
- Operating Temperature :
- 150°C (TJ)
- Emitter-Base Voltage :
- 5(V)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector-Base Voltage :
- 100(V)
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 500nA
- Power Dissipation :
- 1(W)
- Rad Hardened :
- No
- Power - Max :
- 1 W
- Number of Pins :
- 3
- Package :
- Bag
- Reach Compliance Code :
- Unknown
- Polarity :
- NPN
- Mount :
- Through Hole
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 80 V
- Collector Current (DC) :
- 1(A)
- Number of Terminals :
- 3
- Terminal Form :
- Wire
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 1 A
- Collector Current-Max (IC) :
- 1 A
- Datasheets
- NTE2341

NPN - Darlington 150°C (TJ) 500nA 1 Elements SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole
NTE2341 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5 V can result in a high level of efficiency.There is no device package available from the supplier for this product.80 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1 A volts.
NTE2341 Features
the DC current gain for this device is 2000 @ 500mA, 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5 V
the supplier device package of TO-92
NTE2341 Applications
There are a lot of NTE Electronics, Inc
NTE2341 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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