NTE2340

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Mfr.Part #
NTE2340
Manufacturer
NTE Electronics, Inc.
Package / Case
3-SIP
Datasheet
Download
Description
TRANS NPN DARL 60V 8A 3SIP
Stock
232
In Stock :
232

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Current-Max (IC) :
8 A
Package :
Bag
DC Current Gain-Min (hFE) :
500
Pin Count :
3
Terminal Position :
Single
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 8mA, 4A
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Type :
NPN - Darlington
Collector-Emitter Voltage-Max :
50 V
Package / Case :
3-SIP
Power Dissipation-Max (Abs) :
45 W
Terminal Form :
THROUGH-HOLE
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Surface Mount :
No
Product Status :
Active
Number of Terminals :
3
Subcategory :
Other Transistors
Number of Elements :
1
Current - Collector Cutoff (Max) :
100µA (ICBO)
Series :
-
Supplier Device Package :
3-SIP
Frequency - Transition :
20MHz
Power - Max :
1.3 W
Voltage - Collector Emitter Breakdown (Max) :
60 V
JESD-30 Code :
R-PSIP-T3
Polarity/Channel Type :
NPN
Power Dissipation Ambient-Max :
45 W
Current - Collector (Ic) (Max) :
8 A
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 4A, 3V
Transistor Element Material :
SILICON
Manufacturer :
NTE Electronics
Operating Temperature :
150°C (TJ)
Reach Compliance Code :
Unknown
Datasheets
NTE2340
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2340 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:3-SIP, Mounting Type:Through Hole, Operating Temperature:150°C (TJ), NTE2340 pinout, NTE2340 datasheet PDF, NTE2340 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2340 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2340


NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN 3-SIP Through Hole

NTE2340 Overview


In this device, the DC current gain is 2000 @ 4A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 8mA, 4A.Product comes in the supplier's device package 3-SIP.50 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.

NTE2340 Features


the DC current gain for this device is 2000 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of 3-SIP


NTE2340 Applications


There are a lot of NTE Electronics, Inc
NTE2340 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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