NTE2340
- Mfr.Part #
- NTE2340
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A 3SIP
- Stock
- 232
- In Stock :
- 232
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Current-Max (IC) :
- 8 A
- Package :
- Bag
- DC Current Gain-Min (hFE) :
- 500
- Pin Count :
- 3
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 8mA, 4A
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Transistor Type :
- NPN - Darlington
- Collector-Emitter Voltage-Max :
- 50 V
- Package / Case :
- 3-SIP
- Power Dissipation-Max (Abs) :
- 45 W
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Product Status :
- Active
- Number of Terminals :
- 3
- Subcategory :
- Other Transistors
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Series :
- -
- Supplier Device Package :
- 3-SIP
- Frequency - Transition :
- 20MHz
- Power - Max :
- 1.3 W
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- JESD-30 Code :
- R-PSIP-T3
- Polarity/Channel Type :
- NPN
- Power Dissipation Ambient-Max :
- 45 W
- Current - Collector (Ic) (Max) :
- 8 A
- HTS Code :
- 8541.29.00.95
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 4A, 3V
- Transistor Element Material :
- SILICON
- Manufacturer :
- NTE Electronics
- Operating Temperature :
- 150°C (TJ)
- Reach Compliance Code :
- Unknown
- Datasheets
- NTE2340

NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN 3-SIP Through Hole
NTE2340 Overview
In this device, the DC current gain is 2000 @ 4A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 8mA, 4A.Product comes in the supplier's device package 3-SIP.50 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
NTE2340 Features
the DC current gain for this device is 2000 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of 3-SIP
NTE2340 Applications
There are a lot of NTE Electronics, Inc
NTE2340 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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