NTE2339

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Mfr.Part #
NTE2339
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 800V 3A TO220
Stock
513
In Stock :
513

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Qualification Status :
Not Qualified
Surface Mount :
No
Configuration :
Single
Pin Count :
3
Terminal Position :
Single
Operating Temperature :
150°C (TJ)
Series :
-
Voltage - Collector Emitter Breakdown (Max) :
800 V
Package Shape :
RECTANGULAR
Reach Compliance Code :
Unknown
Power - Max :
30 W
Supplier Device Package :
TO-220
Transistor Type :
NPN
Additional Feature :
High Reliability
Terminal Form :
THROUGH-HOLE
Collector-Emitter Voltage-Max :
800 V
Number of Elements :
1
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Transistor Element Material :
SILICON
Power Dissipation Ambient-Max :
30 W
DC Current Gain-Min (hFE) :
8
Package :
Bag
Manufacturer :
NTE Electronics
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 200mA, 5V
Polarity/Channel Type :
NPN
Collector Current-Max (IC) :
3 A
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
10μA (ICBO)
Product Status :
Active
Number of Terminals :
3
Subcategory :
Other Transistors
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector (Ic) (Max) :
3 A
Power Dissipation-Max (Abs) :
30 W
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
2V @ 300mA, 1.5A
JESD-30 Code :
R-PSFM-T3
HTS Code :
8541.29.00.95
Mounting Type :
Through Hole
Frequency - Transition :
15MHz
Datasheets
NTE2339
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2339 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Package / Case:TO-220-3, Mounting Type:Through Hole, NTE2339 pinout, NTE2339 datasheet PDF, NTE2339 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2339 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2339


NPN 150°C (TJ) 10μA (ICBO) 1 Elements SILICON NPN TO-220-3 Through Hole

NTE2339 Overview


In this device, the DC current gain is 20 @ 200mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 300mA, 1.5A.Product comes in the supplier's device package TO-220.800 V is set as the maximum collector-emitter voltage.There is a 800 V maximal voltage in the device due to collector-emitter breakdown.

NTE2339 Features


the DC current gain for this device is 20 @ 200mA, 5V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the supplier device package of TO-220


NTE2339 Applications


There are a lot of NTE Electronics, Inc
NTE2339 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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