NTE2335

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

60 V

Pin Count :

2

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

Power Dissipation-Max (Abs) :

80 W

Surface Mount :

No

Collector Current-Max (IC) :

5 A

Mounting Type :

Through Hole

Supplier Device Package :

TO-3P

Transistor Application :

AMPLIFIER

Terminal Position :

Single

Collector-Emitter Voltage-Max :

45 V

Reach Compliance Code :

Unknown

Polarity/Channel Type :

NPN

Configuration :

DARLINGTON WITH BUILT-IN DIODE

Terminal Form :

THROUGH-HOLE

Case Connection :

COLLECTOR

Series :

-

Product Status :

Active

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 1mA, 1A

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 5V

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

80 W

Number of Elements :

1

Power Dissipation Ambient-Max :

80 W

Current - Collector Cutoff (Max) :

-

ECCN Code :

EAR99

DC Current Gain-Min (hFE) :

2000

Frequency - Transition :

-

Current - Collector (Ic) (Max) :

5 A

Transistor Type :

NPN - Darlington

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Subcategory :

Other Transistors