NTE2330

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

80 W

Supplier Device Package :

TO-3P

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

AMPLIFIER

Max Collector Current :

20 A

DC Current Gain-Min (hFE) :

500

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

3V @ 20mA, 1A

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

55 V

Max Operating Temperature :

150 °C

Frequency - Transition :

-

Operating Temperature :

150°C (TJ)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

2

Series :

-

JESD-30 Code :

R-PSFM-T3

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 500mA, 5V

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

-

Manufacturer :

NTE Electronics

Collector Current-Max (IC) :

4 A

Reach Compliance Code :

Unknown

RoHS :

Compliant

Package :

Bag

Current - Collector (Ic) (Max) :

4 A

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

45 V

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

5 V

Package / Case :

TO-3P-3, SC-65-3

Min Operating Temperature :

-55 °C

Number of Terminals :

3

Surface Mount :

No

Number of Pins :

3

Power - Max :

80 W

ECCN Code :

EAR99

Subcategory :

Other Transistors

Transistor Element Material :

SILICON

Terminal Form :

THROUGH-HOLE

Collector Emitter Voltage (VCEO) :

55 V

Collector Base Voltage (VCBO) :

55 V

Terminal Position :

Single

Power Dissipation Ambient-Max :

80 W