NTE2327

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Mfr.Part #
NTE2327
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 450V 0.5A TO126
Stock
196
In Stock :
196

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Configuration :
Single
Subcategory :
Other Transistors
Supplier Device Package :
TO-126
JEDEC-95 Code :
TO-126
Manufacturer :
NTE Electronics Inc
Vce Saturation (Max) @ Ib, Ic :
1V @ 20mA, 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 50mA, 5V
Terminal Position :
Single
Qualification Status :
Not Qualified
Series :
-
Package :
Bag
Frequency - Transition :
20MHz
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Collector Current-Max (IC) :
0.5 A
Number of Elements :
1
JESD-30 Code :
R-PSFM-W3
Power - Max :
20 W
Terminal Form :
Wire
Polarity/Channel Type :
NPN
Reach Compliance Code :
Unknown
Surface Mount :
No
Transistor Element Material :
SILICON
Operating Temperature :
150°C (TJ)
Power Dissipation Ambient-Max :
20 W
Current - Collector (Ic) (Max) :
500 mA
Collector-Emitter Voltage-Max :
450 V
Product Status :
Active
Number of Terminals :
3
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
450 V
Package Shape :
RECTANGULAR
Current - Collector Cutoff (Max) :
100μA
Mounting Type :
Through Hole
Package / Case :
TO-225AA, TO-126-3
DC Current Gain-Min (hFE) :
50
Power Dissipation-Max (Abs) :
20 W
Datasheets
NTE2327
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2327 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, NTE2327 pinout, NTE2327 datasheet PDF, NTE2327 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2327


NPN 150°C (TJ) 100μA 1 Elements SILICON NPN TO-225AA, TO-126-3 Through Hole

NTE2327 Overview


In this device, the DC current gain is 50 @ 50mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 20mA, 200mA.Supplier device package TO-126 comes with the product.Voltage of maximal collector-emitter is set to 450 V.The device exhibits a collector-emitter breakdown at 450 V.

NTE2327 Features


the DC current gain for this device is 50 @ 50mA, 5V
the vce saturation(Max) is 1V @ 20mA, 200mA
the supplier device package of TO-126


NTE2327 Applications


There are a lot of NTE Electronics, Inc
NTE2327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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