NTE2323
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- Mfr.Part #
- NTE2323
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- 14-DIP (0.300", 7.62mm)
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A 14DIP
- Stock
- 57
- In Stock ：
- 57
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 4
- Manufacturer :
- NTE Electronics
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Supplier Device Package :
- 14-DIP
- Package :
- Bag
- Collector Current-Max (IC) :
- 0.5 A
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 14
- Voltage - Collector Emitter Breakdown (Max) :
- 200 V
- DC Current Gain-Min (hFE) :
- 40
- Series :
- -
- Reach Compliance Code :
- Unknown
- ECCN Code :
- EAR99
- Product Status :
- Active
- Configuration :
- SEPARATE, 4 ELEMENTS
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Power - Max :
- 750 mW
- Terminal Form :
- THROUGH-HOLE
- JESD-30 Code :
- R-PDIP-T14
- HTS Code :
- 8541.29.00.75
- Current - Collector (Ic) (Max) :
- 500 mA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Collector-Emitter Voltage-Max :
- 200 V
- Package / Case :
- 14-DIP (0.300", 7.62mm)
- Frequency - Transition :
- 80MHz
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA, 10V
- Datasheets
- NTE2323
NPN -55°C ~ 150°C (TJ) 100nA (ICBO) 4 Elements SILICON NPN 14-DIP (0.300", 7.62mm) Through Hole
NTE2323 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.This product comes in a 14-DIP device package from the supplier.A maximal collector-emitter voltage setting of 200 V is available.Device displays Collector Emitter Breakdown (200 V maximal voltage).
NTE2323 Features
the DC current gain for this device is 40 @ 30mA, 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the supplier device package of 14-DIP
NTE2323 Applications
There are a lot of NTE Electronics, Inc
NTE2323 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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