NTE2322

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter-Base Voltage :

5(V)

Operating Temp Range :

-55C to 125C

Collector-Emitter Voltage-Max :

40 V

Pin Count :

14

Transistor Type :

PNP

Terminal Position :

Dual

Series :

-

Package Shape :

RECTANGULAR

Collector Current-Max (IC) :

0.6 A

Reach Compliance Code :

Unknown

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 30mA, 300mA

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

40 V

Number of Terminals :

14

Transistor Element Material :

SILICON

Product Status :

Active

Polarity/Channel Type :

PNP

Current - Collector Cutoff (Max) :

50nA (ICBO)

Power Dissipation :

1.9(W)

Number of Elements :

4

Transistor Application :

AMPLIFIER

DC Current Gain-Min (hFE) :

30

Frequency - Transition :

200MHz

Operating Temperature :

-55°C ~ 125°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Surface Mount :

No

Category :

Bipolar Power

Mounting Type :

Through Hole

Mounting :

Through Hole

Package / Case :

14-DIP (0.300, 7.62mm)

JESD-30 Code :

R-PDIP-T14

Operating Temperature Classification :

Military

Rad Hardened :

No

Configuration :

QUAD

HTS Code :

8541.29.00.75

Collector-Base Voltage :

60(V)

Frequency :

200(MHz)

Package :

Bag

Power - Max :

650 mW

Manufacturer :

NTE Electronics

Terminal Form :

THROUGH-HOLE

Package Type :

DIP

Supplier Device Package :

14-DIP

Qualification Status :

Not Qualified

Collector Current (DC) :

0.6(A)

Output Power :

Not Required(W)

Current - Collector (Ic) (Max) :

600 mA

Transistor Polarity :

PNP