NTE2321

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting :

Through Hole

Mounting Type :

Through Hole

JESD-30 Code :

R-PDIP-T14

Pin Count :

14

Number of Terminals :

14

Package Shape :

RECTANGULAR

Collector-Emitter Voltage-Max :

40 V

Configuration :

QUAD

Terminal Position :

Dual

Transistor Type :

NPN

Emitter-Base Voltage :

5(V)

Current - Collector (Ic) (Max) :

500 mA

Transistor Polarity :

NPN

DC Current Gain-Min (hFE) :

30

Terminal Form :

THROUGH-HOLE

Package :

Bag

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

14-DIP (0.300, 7.62mm)

Category :

Bipolar Power

Operating Temperature Classification :

Military

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Reach Compliance Code :

Unknown

Manufacturer :

NTE Electronics

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

40 V

Frequency :

350(MHz)

Package Type :

DIP

Rad Hardened :

No

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Output Power :

Not Required(W)

Supplier Device Package :

14-DIP

Number of Elements :

4

Transistor Element Material :

SILICON

Collector Current (DC) :

0.5(A)

Product Status :

Active

Collector Current-Max (IC) :

0.5 A

Operating Temp Range :

-65C to 200C

Collector-Base Voltage :

60(V)

Power Dissipation :

1.9(W)

Frequency - Transition :

350MHz

Series :

-

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 30mA, 300mA

Transistor Application :

AMPLIFIER

Power - Max :

650 mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.75

Current - Collector Cutoff (Max) :

50nA (ICBO)