NTE2318

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

JEDEC-95 Code :

TO-218

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

HTS Code :

8541.29.00.95

Max Operating Temperature :

150 °C

Surface Mount :

No

Package :

Bag

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1V @ 2A, 4.5A

Min Operating Temperature :

-65 °C

Current - Collector (Ic) (Max) :

8 A

Subcategory :

Other Transistors

Operating Temperature :

-65°C ~ 150°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :

700 V

Supplier Device Package :

TO-218

JESD-30 Code :

R-PSFM-T3

Collector-Emitter Voltage-Max :

700 V

Number of Terminals :

3

Package Shape :

RECTANGULAR

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Mount :

Through Hole

Terminal Form :

THROUGH-HOLE

Series :

-

Polarity/Channel Type :

NPN

RoHS :

Compliant

Reach Compliance Code :

Unknown

Number of Elements :

1

DC Current Gain-Min (hFE) :

2.25

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

2.25 @ 4.5A, 5V

Collector Current-Max (IC) :

8 A

Max Collector Current :

15 A

Power - Max :

125 W

Transistor Element Material :

SILICON

Power Dissipation Ambient-Max :

125 W

Current - Collector Cutoff (Max) :

100μA

Element Configuration :

Single

Package / Case :

TO-218-3

Transistor Type :

NPN

Number of Pins :

3

ECCN Code :

EAR99

Terminal Position :

Single

Frequency - Transition :

7MHz

Power Dissipation-Max (Abs) :

125 W