NTE2317

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN - Darlington

Collector-Emitter Voltage-Max :

450 V

Package / Case :

TO-3P-3, SC-65-3

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 150mA, 8A

Collector Current-Max (IC) :

15 A

Power Dissipation-Max (Abs) :

150 W

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

HTS Code :

8541.29.00.95

Operating Temperature :

150°C (TJ)

Series :

-

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

1mA

DC Current Gain-Min (hFE) :

300

Number of Terminals :

3

Frequency - Transition :

-

Reach Compliance Code :

Unknown

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 5A, 10V

JEDEC-95 Code :

TO-218

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Manufacturer :

NTE Electronics

Transistor Element Material :

SILICON

Power - Max :

105 W

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Subcategory :

Other Transistors

Voltage - Collector Emitter Breakdown (Max) :

450 V

Package :

Bag

Qualification Status :

Not Qualified

Supplier Device Package :

TO-3PN

Package Shape :

RECTANGULAR

Current - Collector (Ic) (Max) :

15 A

Case Connection :

COLLECTOR

Power Dissipation Ambient-Max :

150 W

Terminal Position :

Single

Number of Elements :

1

Product Status :

Active