NTE2314

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Power - Max :

90 W

Manufacturer :

NTE Electronics

Configuration :

Single

Voltage - Collector Emitter Breakdown (Max) :

50 V

Current - Collector (Ic) (Max) :

15 A

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 8A

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

30

Supplier Device Package :

TO-3P

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A, 2V

Subcategory :

Other Transistors

Mounting Type :

Through Hole

Collector Current-Max (IC) :

15 A

Case Connection :

COLLECTOR

Package / Case :

TO-3P-3, SC-65-3

Series :

-

Frequency - Transition :

20MHz

Package :

Bag

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Product Status :

Active

Terminal Position :

Single

Power Dissipation-Max (Abs) :

90 W

Power Dissipation Ambient-Max :

90 W

Number of Terminals :

3

Number of Elements :

1

Pin Count :

2

Transistor Type :

PNP

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Surface Mount :

No

Operating Temperature :

150°C (TJ)

Current - Collector Cutoff (Max) :

100µA (ICBO)

Collector-Emitter Voltage-Max :

50 V

Reach Compliance Code :

Unknown