NTE2313

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Mfr.Part #
NTE2313
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 2A TO220
Stock
18
In Stock :
18

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 1A
Subcategory :
Other Transistors
Package / Case :
TO-220-3
HTS Code :
8541.29.00.95
Number of Terminals :
3
ECCN Code :
EAR99
Qualification Status :
Not Qualified
Collector Current-Max (IC) :
2 A
JESD-30 Code :
R-PSFM-T3
Voltage - Collector Emitter Breakdown (Max) :
450 V
Supplier Device Package :
TO-220
Number of Elements :
1
Current - Collector Cutoff (Max) :
200μA
Frequency - Transition :
4MHz
Manufacturer :
NTE Electronics
Power - Max :
50 W
Surface Mount :
No
Power Dissipation Ambient-Max :
40 W
Package :
Bag
Terminal Form :
THROUGH-HOLE
Transistor Type :
NPN
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 150°C (TJ)
Series :
-
Reach Compliance Code :
Unknown
JEDEC-95 Code :
TO-220AB
Terminal Position :
Single
Case Connection :
COLLECTOR
Current - Collector (Ic) (Max) :
2 A
DC Current Gain-Min (hFE) :
30
Collector-Emitter Voltage-Max :
450 V
Polarity/Channel Type :
NPN
Configuration :
Single
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
40 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 100mA, 5V
Pin Count :
3
Product Status :
Active
Transistor Application :
SWITCHING
Datasheets
NTE2313
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2313 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:-65°C ~ 150°C (TJ), NTE2313 pinout, NTE2313 datasheet PDF, NTE2313 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2313 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2313


NPN -65°C ~ 150°C (TJ) 200μA 1 Elements SILICON NPN TO-220-3 Through Hole

NTE2313 Overview


This device has a DC current gain of 30 @ 100mA, 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 200mA, 1A means Ic has reached its maximum value(saturated).Product package TO-220 comes from the supplier.450 V is the maximization voltage for the collector-emitter.Collector Emitter Breakdown occurs at 450 VV - Maximum voltage.

NTE2313 Features


the DC current gain for this device is 30 @ 100mA, 5V
the vce saturation(Max) is 1V @ 200mA, 1A
the supplier device package of TO-220


NTE2313 Applications


There are a lot of NTE Electronics, Inc
NTE2313 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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