NTE2306

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Mfr.Part #
NTE2306
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS PNP 160V 16A TO3PN
Stock
419
In Stock :
419

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-3P-3, SC-65-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Subcategory :
Other Transistors
Product Status :
Active
JEDEC-95 Code :
TO-218
Current - Collector Cutoff (Max) :
750µA
Number of Elements :
1
Frequency - Transition :
1MHz
Voltage - Collector Emitter Breakdown (Max) :
160 V
Transistor Element Material :
SILICON
Operating Temperature :
-65°C ~ 150°C (TJ)
ECCN Code :
EAR99
Package :
Bag
Case Connection :
COLLECTOR
Package Shape :
RECTANGULAR
Polarity/Channel Type :
PNP
Surface Mount :
No
Terminal Position :
Single
Current - Collector (Ic) (Max) :
16 A
Transistor Type :
PNP
JESD-30 Code :
R-PSFM-T3
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Unknown
Power - Max :
125 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 8A, 2V
Supplier Device Package :
TO-3PN
Mounting Type :
Through Hole
Manufacturer :
NTE Electronics
Collector-Emitter Voltage-Max :
160 V
Qualification Status :
Not Qualified
Configuration :
Single
Power Dissipation Ambient-Max :
125 W
DC Current Gain-Min (hFE) :
8
Transistor Application :
SWITCHING
Number of Terminals :
3
Vce Saturation (Max) @ Ib, Ic :
3.5V @ 2A, 16A
Series :
-
Power Dissipation-Max (Abs) :
125 W
Collector Current-Max (IC) :
16 A
Datasheets
NTE2306
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2306 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Operating Temperature:-65°C ~ 150°C (TJ), Mounting Type:Through Hole, NTE2306 pinout, NTE2306 datasheet PDF, NTE2306 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2306 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2306


PNP -65°C ~ 150°C (TJ) 750μA 1 Elements SILICON PNP TO-3P-3, SC-65-3 Through Hole

NTE2306 Overview


DC current gain in this device equals 15 @ 8A, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3.5V @ 2A, 16A.Product comes in TO-3PN supplier package.Maximal collector-emitter voltage can be set at 160 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

NTE2306 Features


the DC current gain for this device is 15 @ 8A, 2V
the vce saturation(Max) is 3.5V @ 2A, 16A
the supplier device package of TO-3PN


NTE2306 Applications


There are a lot of NTE Electronics, Inc
NTE2306 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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