NTE2303
- Mfr.Part #
- NTE2303
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 750V 2.5A TO220
- Stock
- 33
- In Stock :
- 33
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation Ambient-Max :
- 65 W
- Package Shape :
- RECTANGULAR
- Collector-Emitter Voltage-Max :
- 750 V
- Polarity/Channel Type :
- NPN
- Frequency - Transition :
- 4MHz
- Terminal Position :
- Single
- Transistor Type :
- NPN
- Number of Terminals :
- 3
- Transistor Application :
- AMPLIFIER
- Subcategory :
- Other Transistors
- Series :
- -
- Current - Collector Cutoff (Max) :
- 1mA
- Qualification Status :
- Not Qualified
- Operating Temperature Classification :
- Military
- Power Dissipation-Max (Abs) :
- 65 W
- Mounting :
- Through Hole
- Package Type :
- TO-220
- Operating Temperature :
- -65°C ~ 125°C (TJ)
- Current - Collector (Ic) (Max) :
- 2.5 A
- Output Power :
- Not Required(W)
- Pin Count :
- 3 +Tab
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Collector Current-Max (IC) :
- 2.5 A
- Power Dissipation :
- 65(W)
- HTS Code :
- 8541.29.00.95
- Emitter-Base Voltage :
- 5(V)
- Voltage - Collector Emitter Breakdown (Max) :
- 750 V
- JESD-30 Code :
- R-PSFM-T3
- Transistor Polarity :
- NPN
- ECCN Code :
- EAR99
- Rad Hardened :
- No
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Operating Temp Range :
- -65C to 125C
- Supplier Device Package :
- TO-220
- Package :
- Bag
- Product Status :
- Active
- DC Current Gain-Min (hFE) :
- 4.5
- Manufacturer :
- NTE Electronics
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Frequency :
- 4(MHz)
- Collector Current (DC) :
- 2.5(A)
- Terminal Form :
- THROUGH-HOLE
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 660mA, 2A
- Power - Max :
- 65 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- -
- Category :
- Bipolar Power
- Datasheets
- NTE2303

NPN -65°C ~ 125°C (TJ) 1mA 1 Elements SILICON NPN TO-220-3 Through Hole
NTE2303 Overview
In this device, the DC current gain is -, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 660mA, 2A.Supplier device package TO-220 comes with the product.Voltage of maximal collector-emitter is set to 750 V.The device exhibits a collector-emitter breakdown at 750 V.
NTE2303 Features
the DC current gain for this device is -
the vce saturation(Max) is 5V @ 660mA, 2A
the supplier device package of TO-220
NTE2303 Applications
There are a lot of NTE Electronics, Inc
NTE2303 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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