NTE2301

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Subcategory :

Other Transistors

JEDEC-95 Code :

TO-218

Package :

Bag

Collector Current (DC) :

5(A)

Current - Collector Cutoff (Max) :

1mA

Category :

Bipolar Power

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-65°C ~ 150°C (TJ)

Power - Max :

100 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

-

Package / Case :

TO-218-3

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Package Shape :

RECTANGULAR

Frequency :

4(MHz)

Series :

-

Package Type :

TO-218

Qualification Status :

Not Qualified

Power Dissipation Ambient-Max :

100 W

Supplier Device Package :

TO-218

Number of Elements :

1

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Product Status :

Active

Surface Mount :

No

Manufacturer :

NTE Electronics

Transistor Polarity :

NPN

Number of Terminals :

3

Operating Temp Range :

-65C to 150C

Vce Saturation (Max) @ Ib, Ic :

5V @ 1.8A, 4.5A

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Collector-Emitter Voltage-Max :

750 V

Collector Current-Max (IC) :

5 A

Pin Count :

3 +Tab

Reach Compliance Code :

Unknown

Emitter-Base Voltage :

5(V)

Transistor Type :

NPN

Mounting :

Through Hole

Rad Hardened :

No

Voltage - Collector Emitter Breakdown (Max) :

750 V

HTS Code :

8541.29.00.95

Frequency - Transition :

4MHz

Terminal Form :

THROUGH-HOLE

Output Power :

Not Required(W)

Current - Collector (Ic) (Max) :

5 A

Configuration :

Single

Power Dissipation-Max (Abs) :

100 W

Power Dissipation :

100(W)

Terminal Position :

Single

Operating Temperature Classification :

Military