NTB75N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 25V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Power Dissipation-Max :

2.4W Ta 214W Tj

Drive Voltage (Max Rds On,Min Rds On) :

5V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Current Rating :

75A

Power Dissipation :

214W

Vgs (Max) :

±20V

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

225A

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 5V

Voltage - Rated DC :

60V

Rise Time :

265ns

Terminal Form :

Gull wing

Fall Time (Typ) :

170 ns

Pin Count :

3

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

844 mJ

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Lead Free :

Lead Free

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

113 ns

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.011Ohm

Drain to Source Breakdown Voltage :

60V

Element Configuration :

Single

Continuous Drain Current (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V