NTB75N06LT4
- Mfr.Part #
- NTB75N06LT4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 22,042
- In Stock :
- 22,042
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 2.4W Ta 214W Tj
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 60V
- Peak Reflow Temperature (Cel) :
- 235
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 265ns
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e0
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 37.5A, 5V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 75A
- Published :
- 2004
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 225A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 75A
- Drain-source On Resistance-Max :
- 0.011Ohm
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 5V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 844 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4370pF @ 25V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- NTB75N06LT4

N-Channel Tape & Reel (TR) 11m Ω @ 37.5A, 5V ±20V 4370pF @ 25V 92nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N06LT4 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 844 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.Peak drain current for this device is 225A, which is its maximum pulsed drain current.Using drive voltage (5V) reduces this device's overall power consumption.
NTB75N06LT4 Features
the avalanche energy rating (Eas) is 844 mJ
a continuous drain current (ID) of 75A
based on its rated peak drain current 225A.
NTB75N06LT4 Applications
There are a lot of ON Semiconductor
NTB75N06LT4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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