NTB75N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

60V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V

Drain-source On Resistance-Max :

0.011Ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Power Dissipation-Max :

2.4W Ta 214W Tj

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 5V

Published :

2004

Current Rating :

75A

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 25V

Rise Time :

265ns

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Terminal Position :

Single

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

844 mJ

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

225A

Continuous Drain Current (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Number of Elements :

1

Peak Reflow Temperature (Cel) :

235

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA