NTB75N06L
- Mfr.Part #
- NTB75N06L
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 6,663
- In Stock :
- 6,663
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 235
- Avalanche Energy Rating (Eas) :
- 844 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Power Dissipation-Max :
- 2.4W Ta 214W Tj
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 75A
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 11m Ω @ 37.5A, 5V
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Published :
- 2004
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- 60V
- Current Rating :
- 75A
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 5V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 4370pF @ 25V
- Drain-source On Resistance-Max :
- 0.011Ohm
- Pulsed Drain Current-Max (IDM) :
- 225A
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Datasheets
- NTB75N06L

N-Channel Tube 11m Ω @ 37.5A, 5V ±20V 4370pF @ 25V 92nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N06L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 844 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 225A, its maximum pulsed drain current.In addition to reducing power consumption, this device uses drive voltage (5V).
NTB75N06L Features
the avalanche energy rating (Eas) is 844 mJ
a continuous drain current (ID) of 75A
based on its rated peak drain current 225A.
NTB75N06L Applications
There are a lot of ON Semiconductor
NTB75N06L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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