NTB75N03RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

DS Breakdown Voltage-Min :

25V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Pin Count :

3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

Drain to Source Voltage (Vdss) :

25V

Power Dissipation-Max :

1.25W Ta 74.4W Tc

Drain-source On Resistance-Max :

0.013Ohm

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta 75A Tc

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

75A

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.333pF @ 20V

Pulsed Drain Current-Max (IDM) :

225A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

71.7 mJ

Qualification Status :

COMMERCIAL

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single