NTB75N03RG
- Mfr.Part #
- NTB75N03RG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 9.7A/75A D2PAK
- Stock
- 25,150
- In Stock :
- 25,150
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.333pF @ 20V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 13.2nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 225A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- DS Breakdown Voltage-Min :
- 25V
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 75A
- Terminal Finish :
- MATTE TIN
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Avalanche Energy Rating (Eas) :
- 71.7 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta 75A Tc
- Drain-source On Resistance-Max :
- 0.013Ohm
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 25V
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 20A, 10V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- No
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Power Dissipation-Max :
- 1.25W Ta 74.4W Tc
- Datasheets
- NTB75N03RG

N-Channel Tube 8m Ω @ 20A, 10V ±20V 1.333pF @ 20V 13.2nC @ 10V 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB75N03RG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 71.7 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.333pF @ 20V.There is no drain current on this device since the maximum continuous current it can conduct is 75A.There is a peak drain current of 225A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 25V, it should remain above the 25V level.The transistor must receive a 25V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTB75N03RG Features
the avalanche energy rating (Eas) is 71.7 mJ
based on its rated peak drain current 225A.
a 25V drain to source voltage (Vdss)
NTB75N03RG Applications
There are a lot of Rochester Electronics, LLC
NTB75N03RG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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