NTB75N06LG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

214W

Continuous Drain Current (ID) :

75A

Drain-source On Resistance-Max :

0.011Ohm

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Number of Terminations :

2

Turn-Off Delay Time :

113 ns

Input Capacitance (Ciss) (Max) @ Vds :

4370pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mount :

Surface Mount

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Fall Time (Typ) :

170 ns

Pulsed Drain Current-Max (IDM) :

225A

Voltage - Rated DC :

60V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tube

Number of Elements :

1

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Pin Count :

3

Avalanche Energy Rating (Eas) :

844 mJ

Current Rating :

75A

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

2.4W Ta 214W Tj

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rise Time :

265ns

Rds On (Max) @ Id, Vgs :

11m Ω @ 37.5A, 5V

Operating Temperature :

-55°C~175°C TJ