NTB75N03R

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Drain to Source Voltage (Vdss) :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

75A

JESD-609 Code :

e0

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

Case Connection :

DRAIN

Power Dissipation-Max :

1.25W Ta 74.4W Tc

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

25V

Avalanche Energy Rating (Eas) :

71.7 mJ

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta 75A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.013Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 250μA

Pin Count :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.333pF @ 20V

Peak Reflow Temperature (Cel) :

235

Pulsed Drain Current-Max (IDM) :

225A

Rds On (Max) @ Id, Vgs :

8m Ω @ 20A, 10V

Number of Terminations :

2

Vgs (Max) :

±20V

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount

FET Type :

N-Channel