NTB75N03-06T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Terminal Finish :

Tin/Lead (Sn/Pb)

Current Rating :

75A

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2005

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 37.5A, 10V

Drain-source On Resistance-Max :

0.0065ohm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 5V

Power Dissipation-Max :

2.5W Ta 125W Tc

Case Connection :

DRAIN

Terminal Position :

Dual

Qualification Status :

Not Qualified

Fall Time (Typ) :

105 ns

JESD-609 Code :

e0

Transistor Element Material :

SILICON

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

ECCN Code :

EAR99

Pin Count :

3

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

1500 mJ

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

75A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-30 Code :

R-PDSO-G2

Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Turn-Off Delay Time :

65 ns

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

240

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5635pF @ 25V

Pulsed Drain Current-Max (IDM) :

225A

Rise Time :

130ns

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate to Source Voltage (Vgs) :

20V