NTB5605T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Drain to Source Breakdown Voltage :

-60V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Element Configuration :

Single

Fall Time (Typ) :

75 ns

Pin Count :

3

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Qualification Status :

Not Qualified

Number of Pins :

3

Number of Elements :

1

Rise Time :

122ns

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Transistor Element Material :

SILICON

Power Dissipation :

88W

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Drain to Source Voltage (Vdss) :

60V

Terminal Form :

Gull wing

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

29 ns

Continuous Drain Current (ID) :

18.5A

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Power Dissipation-Max :

88W Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

55A