NTB5605T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pulsed Drain Current-Max (IDM) :

55A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

18.5A

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Fall Time (Typ) :

75 ns

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

88W Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Published :

2010

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

18.5A Ta

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

122ns

Element Configuration :

Single

Turn-Off Delay Time :

29 ns

Rds On (Max) @ Id, Vgs :

140m Ω @ 8.5A, 5V

Power Dissipation :

88W