NTB5405NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Number of Pins :

3

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

150W

Pin Count :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Drain-source On Resistance-Max :

0.0058ohm

JESD-609 Code :

e3

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

280A

Published :

2008

Turn-Off Delay Time :

32 ns

Continuous Drain Current (ID) :

116A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

42 ns

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

3W Ta 150W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 32V

Avalanche Energy Rating (Eas) :

800 mJ

Rise Time :

153ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 40A, 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Element Configuration :

Single