NTB5405NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Height :

4.83mm

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 40A, 10V

Factory Lead Time :

9 Weeks

FET Type :

N-Channel

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8.5 ns

Continuous Drain Current (ID) :

116A

Rise Time :

153ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 32V

Surface Mount :

yes

Number of Pins :

3

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Pin Count :

3

Length :

10.29mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3W Ta 150W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

32 ns

Current - Continuous Drain (Id) @ 25°C :

116A Tc

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Fall Time (Typ) :

42 ns

Avalanche Energy Rating (Eas) :

800 mJ

Pulsed Drain Current-Max (IDM) :

280A

Published :

2008

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Contact Plating :

Tin

Power Dissipation :

150W

Drain-source On Resistance-Max :

0.0058ohm

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Element Configuration :

Single

Width :

9.65mm